Technologies by William Doolittle
8789
Cascaded Nickel Hard Mask
Scalable, consistent method using plasma etching to create deep mesas for high-power devices
8790
p-type Be-Doped AlN Films and Layered Films
Leveraging the advantages of AIN for ultra-wide bandgap semiconductors as transistors
8810, 8666, 8786
A Method for Creating a Protective Cap Layer for Semiconductor Wafers
Improving protection and performance of LEDs and other devices produced via hybrid growth processes
8435
Molecular Flux Measurement Device and Method
Measuring flux in a molecular beam epitaxy system with greater control and higher efficiency
3556
Eliminating Phase Separation Issues
A technique to grow group-III nitride alloys
5459
Method of Increasing III-Nitride Semiconductor Growth Rate
A method for extremely high growth rates in PAMBE growth of GaN while maintaining a smooth surface microstructure
7009