Technologies by William Doolittle
Leverage the Advantages of Aluminum Nitride for Superior Ultra-Wide Bandgap Semiconductors for High-Power, High-Temperature Diodes and Transistors

Increasing demand of key semiconductor performance parameters is not being met by traditional materials

8666
A Method for Creating a Protective Cap Layer for Semiconductor Wafers
Improving protection and performance of LEDs and other devices produced via hybrid growth processes
8435
Molecular Flux Measurement Device and Method
Measuring flux in a molecular beam epitaxy system with greater control and higher efficiency
3556
Eliminating Phase Separation Issues
A technique to grow group-III nitride alloys
5459
Method of Increasing III-Nitride Semiconductor Growth Rate
A method for extremely high growth rates in PAMBE growth of GaN while maintaining a smooth surface microstructure
7009