Technologies by William Doolittle
Thin Current Spreading Layers Improve Breakdown Performance
For high-power III-nitride devices
For high-power III-nitride devices
8789
Cascaded Nickel Hard Mask
Scalable, consistent method using plasma etching to create deep mesas for high-power devices
Scalable, consistent method using plasma etching to create deep mesas for high-power devices
8790
p-type Be-Doped AlN Films and Layered Films
Leveraging the advantages of AIN for ultra-wide bandgap semiconductors as transistors
Leveraging the advantages of AIN for ultra-wide bandgap semiconductors as transistors
8810, 8666, 8786
A Method for Creating a Protective Cap Layer for Semiconductor Wafers
Improving protection and performance of LEDs and other devices produced via hybrid growth processes
Improving protection and performance of LEDs and other devices produced via hybrid growth processes
8435
Molecular Flux Measurement Device and Method
Measuring flux in a molecular beam epitaxy system with greater control and higher efficiency
Measuring flux in a molecular beam epitaxy system with greater control and higher efficiency
3556
Eliminating Phase Separation Issues
A technique to grow group-III nitride alloys
A technique to grow group-III nitride alloys
5459
Method of Increasing III-Nitride Semiconductor Growth Rate
A method for extremely high growth rates in PAMBE growth of GaN while maintaining a smooth surface microstructure
A method for extremely high growth rates in PAMBE growth of GaN while maintaining a smooth surface microstructure
7009