Technologies by William Doolittle
Leverage the Advantages of Aluminum Nitride for Superior Ultra-Wide Bandgap Semiconductors for High-Power, High-Temperature Diodes and Transistors
Increasing demand of key semiconductor performance parameters is not being met by traditional materials
8666
A Method for Creating a Protective Cap Layer for Semiconductor Wafers
Improving protection and performance of LEDs and other devices produced via hybrid growth processes
Improving protection and performance of LEDs and other devices produced via hybrid growth processes
8435
Molecular Flux Measurement Device and Method
Measuring flux in a molecular beam epitaxy system with greater control and higher efficiency
Measuring flux in a molecular beam epitaxy system with greater control and higher efficiency
3556
Eliminating Phase Separation Issues
A technique to grow group-III nitride alloys
A technique to grow group-III nitride alloys
5459
Method of Increasing III-Nitride Semiconductor Growth Rate
A method for extremely high growth rates in PAMBE growth of GaN while maintaining a smooth surface microstructure
A method for extremely high growth rates in PAMBE growth of GaN while maintaining a smooth surface microstructure
7009