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A Method for Creating a Protective Cap Layer for Semiconductor WafersImproving protection and performance of LEDs and other devices produced via hybrid growth processes |
8435 |
Cascaded Nickel Hard MaskScalable, consistent method using plasma etching to create deep mesas for high-power devices |
8790 |
Eliminating Phase Separation IssuesA technique to grow group-III nitride alloys |
5459 |
Method of Increasing III-Nitride Semiconductor Growth RateA method for extremely high growth rates in PAMBE growth of GaN while maintaining a smooth surface microstructure |
7009 |
Molecular Flux Measurement Device and MethodMeasuring flux in a molecular beam epitaxy system with greater control and higher efficiency |
3556 |
p-type Be-Doped AlN Films and Layered Films Leveraging the advantages of AIN for ultra-wide bandgap semiconductors as transistors |
8810, 8666, 8786 |
Thin Current Spreading Layers Improve Breakdown PerformanceFor high-power III-nitride devices |
8789 |